Invention Application
- Patent Title: APPARATUS FOR SUBSTRATE PROCESSING
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Application No.: US17820670Application Date: 2022-08-18
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Publication No.: US20230010069A1Publication Date: 2023-01-12
- Inventor: Masahiro Tabata , Toru Hisamatsu , Sho Kumakura , Ryuichi Asako , Shinya Ishikawa , Masanobu Honda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2017-247342 20171225,JP2018-195950 20181017
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01J37/32 ; H01L21/02 ; G03F7/40 ; H01L21/311 ; H01L21/3065 ; H01L21/308 ; H01L21/768
Abstract:
A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
Information query
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