公开(公告)号：US12125710B2

公开(公告)日：2024-10-22

申请号：US17586251

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Yusuke Takino

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/334

Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.

公开(公告)号：US11380555B2

公开(公告)日：2022-07-05

申请号：US16953369

申请日：2020-11-20

Applicant: Tokyo Electron Limited

Inventor： Maju Tomura ,  Sho Kumakura ,  Hironari Sasagawa ,  Yoshihide Kihara

IPC: H01L21/311 ,  H01J37/32

Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.

公开(公告)号：US20220115241A1

公开(公告)日：2022-04-14

申请号：US17560228

申请日：2021-12-22

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/311 ,  H01L21/02

Abstract: A substrate processing apparatus includes: a chamber having at least one gas inlet and at least one gas outlet; a substrate support disposed in the chamber; and a controller. The controller causes (a) placing a substrate on the substrate support, the substrate including a base layer and a first layer formed on the base layer; (b) etching the first layer to form a recess in the first layer; (c) when determined that the recess satisfies a predetermined condition, forming a first film on a bottom surface of the recess by forming an inhibitor on the bottom surface of the recess, a predetermined gas species being not adsorbed to the first film; (c) after (b), forming a second film on a side wall of the recess using the predetermined gas species as a precursor gas; and (d) etching the first layer through the recess.

公开(公告)号：US10672605B2

公开(公告)日：2020-06-02

申请号：US15952359

申请日：2018-04-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L29/66

Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

公开(公告)号：US10269578B2

公开(公告)日：2019-04-23

申请号：US15952328

申请日：2018-04-13

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.

公开(公告)号：US12100578B2

公开(公告)日：2024-09-24

申请号：US17557045

申请日：2021-12-21

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Yuta Nakane

IPC: C23C16/02 ,  B05D1/00 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32504 ,  B05D1/62 ,  C23C16/0272 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32972 ,  H01J37/32082 ,  H01J2237/332 ,  H01L21/3065

Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.

公开(公告)号：US11728166B2

公开(公告)日：2023-08-15

申请号：US16803377

申请日：2020-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho Kumakura ,  Maju Tomura ,  Yoshihide Kihara ,  Hironari Sasagawa

IPC: H01L21/033 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/0335 ,  H01J37/3244 ,  H01L21/02315 ,  H01L21/31144 ,  H01J2237/3321

Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.

公开(公告)号：US11488836B2

公开(公告)日：2022-11-01

申请号：US16999145

申请日：2020-08-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US11114304B2

公开(公告)日：2021-09-07

申请号：US16564851

申请日：2019-09-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Yoshihide Kihara ,  Masanobu Honda ,  Maju Tomura ,  Sho Kumakura

IPC: H01L21/311 ,  H01L21/02

Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.

公开(公告)号：US20200381265A1

公开(公告)日：2020-12-03

申请号：US16999145

申请日：2020-08-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.