公开(公告)号：US11961755B2

公开(公告)日：2024-04-16

申请号：US17649968

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shinya Ishikawa

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32174 ,  H01J37/32642 ,  H01J37/32724

Abstract: A substrate support includes a substrate support portion having an electrostatic chuck for adsorbing a substrate and a substrate heater electrode inside the electrostatic chuck; a ring support supporting an edge ring and having an edge ring heater electrode inside; a base having a central stage on which the substrate support portion is disposed, and an outer peripheral stage on which the ring support is disposed; a first power feeding terminal disposed immediately below the substrate support portion to supply a power to the substrate heater electrode; and a second power feeding terminal disposed immediately below the ring support to supply the power to the edge ring heater electrode. An upper surface of the outer peripheral stage is positioned lower than that of the central stage, and a thickness of the ring support is equal to or larger than 40% of a thickness of the substrate support portion.

公开(公告)号：US20220254671A1

公开(公告)日：2022-08-11

申请号：US17649968

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shinya Ishikawa

IPC: H01L21/683 ,  H01J37/32

Abstract: A substrate support includes a substrate support portion having an electrostatic chuck for adsorbing a substrate and a substrate heater electrode inside the electrostatic chuck; a ring support supporting an edge ring and having an edge ring heater electrode inside; a base having a central stage on which the substrate support portion is disposed, and an outer peripheral stage on which the ring support is disposed; a first power feeding terminal disposed immediately below the substrate support portion to supply a power to the substrate heater electrode; and a second power feeding terminal disposed immediately below the ring support to supply the power to the edge ring heater electrode. An upper surface of the outer peripheral stage is positioned lower than that of the central stage, and a thickness of the ring support is equal to or larger than 40% of a thickness of the substrate support portion.

公开(公告)号：US11328933B2

公开(公告)日：2022-05-10

申请号：US16952086

申请日：2020-11-19

Applicant: Tokyo Electron Limited

Inventor： Shinya Ishikawa ,  Kenta Ono ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3213

Abstract: A technique enables etching of a film on a substrate with reduced etching on the surface of a side wall. An etching method includes forming a protective layer on a surface of a side wall defining a recess in a substrate. The protective layer contains sulfur atoms. The etching method further includes etching a film on the substrate to increase a depth of the recess after forming the protective layer.

公开(公告)号：US20210398818A1

公开(公告)日：2021-12-23

申请号：US17351549

申请日：2021-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenta ONO ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

公开(公告)号：US20190198350A1

公开(公告)日：2019-06-27

申请号：US16229036

申请日：2018-12-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  G03F7/40 ,  H01L21/02 ,  H01J37/32

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US12071687B2

公开(公告)日：2024-08-27

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US20230010069A1

公开(公告)日：2023-01-12

申请号：US17820670

申请日：2022-08-18

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US20220411928A1

公开(公告)日：2022-12-29

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US11469111B2

公开(公告)日：2022-10-11

申请号：US17039295

申请日：2020-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya Ishikawa ,  Toru Hisamatsu

IPC: H01L21/311 ,  H01L21/027 ,  H01J37/32

Abstract: A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.

公开(公告)号：US11421323B2

公开(公告)日：2022-08-23

申请号：US16976544

申请日：2019-07-08

Applicant: Tokyo Electron Limited

Inventor： Daisuke Hayashi ,  Shinya Ishikawa

IPC: C23C16/458 ,  C23C14/50 ,  C23C16/46 ,  H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  C23C16/509

Abstract: A stage for mounting a workpiece and an edge ring is provided, the stage including a first flow path and a second flow path along each of which a fluid flows, within the stage; a bifurcation at which an inlet port of the first flow path and an inlet port of the second flow path are coupled; a junction at which an outlet port of the first flow path and an outlet port of the second flow path are coupled; and a member provided at least one of the bifurcation and the junction, the member having at least one opening that communicates with the first flow path and the second flow path.