Invention Application
- Patent Title: SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME
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Application No.: US17956281Application Date: 2022-09-29
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Publication No.: US20230013146A1Publication Date: 2023-01-19
- Inventor: Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Jeong-heon PARK , Junho JEONG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0113431 20190916
- Main IPC: C23C14/54
- IPC: C23C14/54 ; H01L27/22 ; C23C14/00 ; G11B5/851 ; H01L43/12

Abstract:
A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
Public/Granted literature
- US11834738B2 Sputtering apparatus and method of fabricating magnetic memory device using the same Public/Granted day:2023-12-05
Information query
IPC分类: