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公开(公告)号:US20230013146A1
公开(公告)日:2023-01-19
申请号:US17956281
申请日:2022-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Jeong-heon PARK , Junho JEONG
Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
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公开(公告)号:US20210079517A1
公开(公告)日:2021-03-18
申请号:US16856539
申请日:2020-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Jeong-heon PARK , Junho JEONG
Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
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