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公开(公告)号：US20210079517A1
公开(公告)日：2021-03-18
申请号：US16856539
申请日：2020-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Jeong-heon PARK , Junho JEONG
Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
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公开(公告)号：US20130285178A1
公开(公告)日：2013-10-31
申请号：US13926048
申请日：2013-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangeun Lee , Sechung OH , Jeahyoung LEE , Woojin KIM , Junho JEONG , Woo Chang LIM
IPC: H01L43/02
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/161 , H01F10/123 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/02 , H01L43/08
Abstract: A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括第一垂直磁性层和衬底上的第二垂直磁性层，第一垂直磁性层和第二垂直磁性层之间的隧道势垒层，以及在第一垂直磁性层之间的交换耦合层， 第一垂直磁性层和第一垂直磁性层的第二子层。
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公开(公告)号：US20230117646A1
公开(公告)日：2023-04-20
申请号：US17952808
申请日：2022-09-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Junho JEONG , YoungJun CHO
Abstract: A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.
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公开(公告)号：US20220320418A1
公开(公告)日：2022-10-06
申请号：US17502411
申请日：2021-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Whankyun KIM , Joonmyoung LEE , Junho JEONG , Eunsun NOH , Jeong-Heon PARK , YoungJun CHO
Abstract: A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.
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公开(公告)号：US20210367142A1
公开(公告)日：2021-11-25
申请号：US16950009
申请日：2020-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung Chul LEE , Whankyun KIM , Joonmyoung LEE , Junho JEONG
Abstract: A magnetic memory device including a lower electrode on a substrate; a conductive line on the lower electrode; and a magnetic tunnel junction pattern on the conductive line, wherein the conductive line includes a first conductive line adjacent to the magnetic tunnel junction pattern; a second conductive line between the lower electrode and the first conductive line; and a high resistance layer at least partially between the first conductive line and the second conductive line, a resistivity of the second conductive line is lower than a resistivity of the first conductive line, and a resistivity of the high resistance layer is higher than the resistivity of the first conductive line and higher than the resistivity of the second conductive line.
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Patent Agency Ranking
公开(公告)号：US20230074076A1
公开(公告)日：2023-03-09
申请号：US17726056
申请日：2022-04-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Heeju SHIN , Junho JEONG
Abstract: A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.
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公开(公告)号：US20230013146A1
公开(公告)日：2023-01-19
申请号：US17956281
申请日：2022-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Joonmyoung LEE , Whankyun KIM , Eunsun NOH , Jeong-heon PARK , Junho JEONG
Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
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公开(公告)号：US20220383923A1
公开(公告)日：2022-12-01
申请号：US17576047
申请日：2022-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Whankyun KIM , Jeong-Heon PARK , Heeju SHIN , Youngjun CHO , Joonmyoung LEE , Junho JEONG
Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.
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公开(公告)号：US20210102285A1
公开(公告)日：2021-04-08
申请号：US16898609
申请日：2020-06-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeong-Heon PARK , Whankyun KIM , Sukhoon KIM , Junho JEONG
IPC: C23C14/46 , H01L21/687
Abstract: An ion beam deposition apparatus includes a substrate assembly to secure a substrate, a target assembly slanted with respect to the substrate assembly, the target assembly including a target with deposition materials, an ion gun to inject ion beams onto the target, such that ions of the deposition materials are discharged toward the substrate assembly to form a thin layer on the substrate, and a substrate heater to heat the substrate to a deposition temperature higher than a room temperature.
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公开(公告)号：US20240249760A1
公开(公告)日：2024-07-25
申请号：US18593293
申请日：2024-03-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Whankyun KIM , Jeong-Heon PARK , Heeju SHIN , YoungJun CHO , Joonmyoung LEE , Junho JEONG
CPC classification number: G11C11/161 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85
Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.
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