- 专利标题: SIZE SETTING METHOD FOR POWER SWITCH TRANSISTOR AND SYSTEM THEREOF
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申请号: US17676882申请日: 2022-02-22
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公开(公告)号: US20230147226A1公开(公告)日: 2023-05-11
- 发明人: Shuenrun Seara JIAN
- 申请人: Integrated Silicon Solution Inc.
- 申请人地址: US CA Milpitas
- 专利权人: Integrated Silicon Solution Inc.
- 当前专利权人: Integrated Silicon Solution Inc.
- 当前专利权人地址: US CA Milpitas
- 优先权: TW 0141558 2021.11.08
- 主分类号: H03K19/017
- IPC分类号: H03K19/017 ; H03K19/00
摘要:
A size setting method for a power switch transistor and a system thereof are proposed. A load current extracting step is performed to extract a first load current and a second load current. A limited voltage drop calculating step is performed to calculate a limited voltage drop according to a speed proportional value, the first load current and the second load current. A standard supply current calculating step is performed to calculate a standard supply current according to the limited voltage drop. A simulated supply current calculating step is performed to calculate a simulated supply current according to the standard supply current, the limited voltage drop and a line voltage value. A size setting step is performed to compare the first load current with the simulated supply current to calculate a size parameter, and set a size of the power switch transistor according to the size parameter.
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