公开(公告)号：US20230140988A1

公开(公告)日：2023-05-11

申请号：US17704152

申请日：2022-03-25

申请人： Integrated Silicon Solution Inc.

发明人： Shuenrun Seara JIAN

IPC分类号： G11C11/4074 ,  G05F1/56

CPC分类号： G11C11/4074 ,  G05F1/56

摘要： A power management circuit in a low-power double data rate memory is configured to manage a plurality of power supplies memory according to a reference voltage. A low dropout regulator has a first transmitting terminal and a second transmitting terminal. The low dropout regulator adjusts a voltage difference between a first voltage and a second voltage according to the reference voltage. A power network structure is electrically connected to the low dropout regulator. A first power network circuit has a first connecting point, a grid shape and a first unit network space. A second power network circuit has a second connecting point, another grid shape and a second unit network space. The second connecting point is separated from the first connecting point by a distance. The distance is smaller than or equal to one of the first unit network space and the second unit network space.

公开(公告)号：US20230147226A1

公开(公告)日：2023-05-11

申请号：US17676882

申请日：2022-02-22

申请人： Integrated Silicon Solution Inc.

发明人： Shuenrun Seara JIAN

IPC分类号： H03K19/017 ,  H03K19/00

CPC分类号： H03K19/017 ,  H03K19/0013

摘要： A size setting method for a power switch transistor and a system thereof are proposed. A load current extracting step is performed to extract a first load current and a second load current. A limited voltage drop calculating step is performed to calculate a limited voltage drop according to a speed proportional value, the first load current and the second load current. A standard supply current calculating step is performed to calculate a standard supply current according to the limited voltage drop. A simulated supply current calculating step is performed to calculate a simulated supply current according to the standard supply current, the limited voltage drop and a line voltage value. A size setting step is performed to compare the first load current with the simulated supply current to calculate a size parameter, and set a size of the power switch transistor according to the size parameter.

公开(公告)号：US20230176600A1

公开(公告)日：2023-06-08

申请号：US17736119

申请日：2022-05-04

申请人： Integrated Silicon Solution Inc.

发明人： Shuenrun Seara JIAN

IPC分类号： G05F1/565 ,  G05F1/46

CPC分类号： G05F1/565 ,  G05F1/468

摘要： A controlling circuit for a low-power low dropout regulator includes the low-power low dropout regulator, a current load detector and a bias current circuit. The low-power low dropout regulator has a first transmitting terminal and a second transmitting terminal. The first transmitting terminal is configured to transmit a first voltage, the second transmitting terminal is configured to transmit a second voltage, and the low-power low dropout regulator adjusts a voltage difference between the first voltage and the second voltage. The current load detector detects the first voltage and the second voltage, and compares the reference voltage with the second voltage to generate a detected signal. The bias current circuit generates a bias voltage and a reference current, and the low-power low dropout regulator dynamically adjust a bias current of the low-power low dropout regulator, so that the bias current is positively correlated with the reference current.