Invention Publication
- Patent Title: Staggered Metal Mesh on Backside of Device Die and Method Forming Same
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Application No.: US17655645Application Date: 2022-03-21
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Publication No.: US20230154764A1Publication Date: 2023-05-18
- Inventor: Tzu-Sung Huang , Tsung-Hsien Chiang , Ming Hung Tseng , Hao-Yi Tsai , Yu-Hsiang Hu , Chih-Wei Lin , Lipu Kris Chuang , Wei Lun Tsai , Kai-Ming Chiang , Ching Yao Lin , Chao-Wei Li , Ching-Hua Hsieh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498

Abstract:
A method includes forming a first metal mesh over a carrier, forming a first dielectric layer over the first metal mesh, and forming a second metal mesh over the first dielectric layer. The first metal mesh and the second metal mesh are staggered. The method further includes forming a second dielectric layer over the second metal mesh, attaching a device die over the second dielectric layer, with the device die overlapping the first metal mesh and the second metal mesh, encapsulating the device die in an encapsulant, and forming redistribution lines over and electrically connecting to the device die.
Information query
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