Invention Publication
- Patent Title: MICROLENS STRUCTURES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS
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Application No.: US18149862Application Date: 2023-01-04
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Publication No.: US20230154959A1Publication Date: 2023-05-18
- Inventor: Marc Allen SULFRIDGE , Swarnal BORTHAKUR , Nathan Wayne CHAPMAN
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- The original application number of the division: US16684033 2019.11.14
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/107

Abstract:
An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.
Public/Granted literature
- US12034023B2 Microlens structures for semiconductor device with single-photon avalanche diode pixels Public/Granted day:2024-07-09
Information query
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