公开(公告)号：US20210151490A1

公开(公告)日：2021-05-20

申请号：US16684033

申请日：2019-11-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

公开(公告)号：US20170374306A1

公开(公告)日：2017-12-28

申请号：US15191319

申请日：2016-06-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Brian Anthony VAARTSTRA ,  Nathan Wayne CHAPMAN

IPC: H04N5/369 ,  H04N5/225 ,  H04N5/232 ,  H04N9/04

CPC classification number: H04N5/3696 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H04N5/2258 ,  H04N5/23212 ,  H04N9/045

Abstract: An imaging system may include at least two image sensors. Each image sensor may have a respective lens module that is configured to focus light on the image sensor. One of the image sensors may be a monochrome sensor, while another image sensor may be a color sensor. The monochrome sensor may include phase detection pixels while the color sensor may not include phase detection pixels. The imaging system may include processing circuitry that is configured to adjust the lens modules for both the monochrome and color sensors based on the data from the phase detection pixels.

公开(公告)号：US20230154959A1

公开(公告)日：2023-05-18

申请号：US18149862

申请日：2023-01-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN

IPC: H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14627 ,  H01L27/14689 ,  H01L27/14643 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

公开(公告)号：US20220013563A1

公开(公告)日：2022-01-13

申请号：US16948799

申请日：2020-10-01

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Nathan Wayne CHAPMAN ,  Brian Anthony VAARTSTRA ,  Amanda Thuy Trang VU

IPC: H01L27/146

Abstract: An image sensor with uniform, well-controlled air gaps is provided. A structure that is at least partially filled with organic material may be formed on the image sensor. A hybrid organic/inorganic film layer may be formed over the organic material. The image sensor may then be exposed to energy, which causes the organic material to sublimate through the hybrid film layer, which itself may become a gas permeable layer when exposed to energy. After sublimation, the regions where the organic material was previously filled become air gaps with a low index of refraction. Air gaps formed in this way can be configured over photodiodes as light guides or focusing structures, as concave/convex microlenses, in between photodiodes as isolation structures, in between color filter elements to reduce crosstalk, and/or over microlenses to enhancing focusing power.

公开(公告)号：US20190123083A1

公开(公告)日：2019-04-25

申请号：US15787959

申请日：2017-10-19

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN ,  Brian Anthony VAARTSTRA

IPC: H01L27/146

Abstract: An image sensor may include an array of pixels having a color filter layer. The color filter layer may include colored elements and clear elements. The clear elements may be formed from transparent dielectric material. The color filter layer may include a grid of light-blocking material that forms color filter container structures having an array of openings in which the colored elements and the clear elements are formed. The color filter container structures may be formed from the same transparent dielectric material that forms the clear elements. The color filter container structures may be formed from opaque materials or transparent materials that form structures such as planarization layers, microlenses, or antireflection coatings for the array of pixels. The material used to form the color filter container structures may have a refractive index that is sufficiently high to prevent light from passing between adjacent elements in the color filter layer.

公开(公告)号：US20180301484A1

公开(公告)日：2018-10-18

申请号：US15488646

申请日：2017-04-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Brian Anthony VAARTSTRA ,  Nathan Wayne CHAPMAN

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor may include phase detecting and autofocusing (PDAF) pixels. Each PDAF pixel may be hexagonal may be divided into two or more photodiode regions. A semi-spherical microlens may be formed over each PDAF pixel. Each PDAF pixel may be further divided into an inner sub-pixel portion and an outer sub-pixel portion to provide high dynamic range (HDR) functionality. The outer sub-pixel portion may be further divided into two or more photodiode regions to provide depth sensing capability. A semi-toroidal microlens may be formed over each PDAF HDR pixel. Each PDAF HDR pixel may also have a snowflake-like shape or some irregular shape. Smaller interstitial pixels may be dispersed among the larger snowflake-like pixels.