Invention Publication
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
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Application No.: US18163078Application Date: 2023-02-01
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Publication No.: US20230187219A1Publication Date: 2023-06-15
- Inventor: Meng ZHU
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei City
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei City
- Priority: CN 2110775030.X 2021.07.08
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/762 ; H01L21/02 ; H01L21/033 ; H01L21/027 ; H01L21/321 ; H01L21/3213 ; H01L21/311
Abstract:
A method for manufacturing a semiconductor includes: providing a substrate; forming a polysilicon layer on the substrate, a surface, away from the substrate, of the polysilicon layer having a native oxide; and performing a nitriding treatment to the native oxide, to nitrogenize the native oxide into a silicon oxynitride layer. The native oxide is nitrogenized into the silicon oxynitride layer.
Information query
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