- 专利标题： BURIED POWER RAIL FORMATION FOR VERTICAL FIELD EFFECT TRANSISTORS
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申请号： US17564571申请日： 2021-12-29
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公开(公告)号： US20230207697A1公开(公告)日： 2023-06-29
- 发明人: Ruilong Xie , Junli Wang , Brent A. Anderson , Chen Zhang , Heng Wu , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L23/528 ; H01L23/522
摘要：
A channel fin extends vertically above a bottom source/drain region, a protective liner is positioned along opposite sidewalls of the bottom source/drain region. The bottom source/drain region is positioned above a semiconductor layer in contact with a first portion of an inner spacer. A first metal layer is positioned between the first portion of the inner spacer and a second portion of the inner spacer, the first portion of the inner spacer partially covers a top surface of the first metal layer and the second portion of the inner spacer substantially covers a bottom surface of the first metal layer for providing a buried power rail. A shallow trench isolation region is positioned above an exposed portion of the first metal layer, the shallow trench isolation region is adjacent to the first portion of the inner spacer, the semiconductor layer, and the bottom source/drain region.
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