An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.