公开(公告)号：US20220143655A1

公开(公告)日：2022-05-12

申请号：US17585274

申请日：2022-01-26

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuya DOBASHI ,  Takehiko ORII ,  Yukimasa SAITO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Koichi IZUMI ,  Yu YOSHINO ,  Tadashi SHOJO ,  Keita KANEHIRA

IPC: B08B5/02 ,  B08B7/00 ,  H01L21/67

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20130333726A1

公开(公告)日：2013-12-19

申请号：US13910270

申请日：2013-06-05

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

Abstract translation: 本公开提供了一种基板处理装置，包括：处理室，被配置为处理基板; 流体供给源，其构造成以预定压力供给用于所述基板的处理中使用的基板处理流体; 恒定压力供给路径，被配置为以预定压力将所述基板处理流体从所述流体供给源供给到所述处理室，而不增加所述基板处理液体的压力; 增压压力供给路径，被配置为通过增压机构将衬底处理流体从流体供给源的压力升高到预定压力，并将增压的衬底处理流体供应到处理室; 以及控制单元，被配置为切换恒压供给路径和升压压力供给路径。

公开(公告)号：US20220277968A1

公开(公告)日：2022-09-01

申请号：US17745998

申请日：2022-05-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/67 ,  H01L21/02

Abstract: A method for cleaning a substrate includes supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film, volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared, and supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.

公开(公告)号：US20170320107A1

公开(公告)日：2017-11-09

申请号：US15491058

申请日：2017-04-19

Applicant: Tokyo Electron Limited

Inventor： Gentaro GOSHI ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: B08B3/10 ,  H01L21/67

CPC classification number: B08B3/10 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109

Abstract: The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid from the fluid supply source to the processing chamber in a predetermined pressure without boosting the pressure of the substrate processing liquid; a boosted pressure supplying path configured to boost the pressure of the substrate processing fluid from the fluid supply source into a predetermined pressure by a booster mechanism and supply the pressure boosted substrate processing fluid to the processing chamber; and a control unit configured to switch over the constant pressure supplying path and the boosted pressure supplying path.

公开(公告)号：US20140020721A1

公开(公告)日：2014-01-23

申请号：US13941836

申请日：2013-07-15

Applicant: Tokyo Electron Limited ,  Kabushiki Kaisha Toshiba

Inventor： Hidekazu HAYASHI ,  Yohei SATO ,  Hisashi OKUCHI ,  Hiroshi TOMITA ,  Kazuyuki MITSUOKA ,  Gen YOU ,  Hiroki OHNO ,  Takehiko ORII ,  Takayuki TOSHIMA

IPC: H01L21/02

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/67109

Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

Abstract translation: 一种基材处理方法和装置，用于在将基材输送到处理容器中时防止基材的防干燥含氟有机溶剂的蒸发，并且可以防止处理容器中的含氟有机溶剂的分解。 其表面被第一含氟有机溶剂覆盖的基材被携带到处理容器中。 通过形成第一含氟有机溶剂和第二含氟有机溶剂的混合物的高压流体气氛，第一含氟有机溶剂的沸点低于第一氟 在处理容器中，例如， 通过将第二含氟有机溶剂的高压流体供给到处理容器中。 此后，将处于高压流体或气体状态的流体从处理容器排出，从而获得处于干燥状态的基板。

公开(公告)号：US20130145643A1

公开(公告)日：2013-06-13

申请号：US13693712

申请日：2012-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Kenji SEKIGUCHI ,  Noritaka UCHIDA ,  Satoru TANAKA ,  Hiroki OHNO

IPC: F26B5/00

CPC classification number: F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

Abstract: A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

Abstract translation: 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US20210107041A1

公开(公告)日：2021-04-15

申请号：US16496714

申请日：2018-02-09

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuya DOBASHI ,  Takehiko ORII ,  Yukimasa SAITO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Koichi IZUMI ,  Yu YOSHINO ,  Tadashi SHOJO ,  Keita KANEHIRA

IPC: B08B5/02 ,  H01L21/67 ,  B08B7/00

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20200234974A1

公开(公告)日：2020-07-23

申请号：US16839176

申请日：2020-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/687 ,  H01L21/67 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/66

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20190355589A1

公开(公告)日：2019-11-21

申请号：US16413068

申请日：2019-05-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Yasuo ASADA ,  Jun LIN ,  Ayano HAGIWARA ,  Shinji IRIE ,  Kenji TANOUCHI ,  Kakeru WADA

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.

公开(公告)号：US20190228981A1

公开(公告)日：2019-07-25

申请号：US16252918

申请日：2019-01-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/3065

Abstract: There is provided an etching method which includes: supplying an etching gas to a workpiece including a first SiGe-based material and a second SiGe-based material having different Ge concentrations; and selectively etching the first SiGe-based material and the second SiGe-based material with respect to the other using a difference in incubation time until the first SiGe-based material and the second SiGe-based material begin to be etched by the etching gas.