- 专利标题： HIGH ASPECT RATIO CONTACT STRUCTURE WITH MULTIPLE METAL STACKS
-
申请号： US17657006申请日： 2022-03-29
-
公开(公告)号： US20230317802A1公开(公告)日： 2023-10-05
- 发明人: Junli Wang , Brent A Anderson , Terence Hook , Indira Seshadri , Albert M. Young , Stuart Sieg , Su Chen Fan , Shogo Mochizuki
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/40
摘要：
A high aspect ratio contact structure formed within a dielectric material includes a top portion and a bottom portion. The top portion of the contact structure includes a tapering profile towards the bottom portion. A first metal stack surrounded by an inner spacer is located within the top portion of the contact structure and a second metal stack is located within the bottom portion of the contact structure. A width of the bottom portion of the contact structure is greater than a minimum width of the top portion of the contact structure.
信息查询
IPC分类:
