Invention Publication
- Patent Title: MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US18352872Application Date: 2023-07-14
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Publication No.: US20230360686A1Publication Date: 2023-11-09
- Inventor: Zong-You LUO , Ya-Jui TSOU , Chee-Wee LIU , Shao-Yu LIN , Liang-Chor CHUNG , Chih-Lin WANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- The original application number of the division: US16572329 2019.09.16
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H10B61/00 ; H10N50/01 ; H10N50/10 ; H10N50/80 ; H10N50/85
Abstract:
A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.
Information query
