- 专利标题： PHOTOSENSITIVE MATERIAL FOR PHOTORESIST AND LITHOGRAPHY
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申请号： US17695069申请日： 2022-03-15
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公开(公告)号： US20230087992A1公开(公告)日： 2023-03-23
- 发明人: Wei-Che Hsieh , Yu-Chung Su , Chia-Ching Chu , Tzu-Yi Wang , Ta-Cheng Lien , Hsin-Chang Lee , Ching-Yu Chang , Yahru Cheng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/40 ; G03F7/004 ; G03F7/32
摘要：
Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.
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