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公开(公告)号：US11899357B2
公开(公告)日：2024-02-13
申请号：US17321852
申请日：2021-05-17
IPC分类号： G03F1/32
CPC分类号： G03F1/32
摘要： A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.
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公开(公告)号：US11726399B2
公开(公告)日：2023-08-15
申请号：US17556681
申请日：2021-12-20
发明人： Pei-Cheng Hsu , Ching-Huang Chen , Hung-Yi Tsai , Ming-Wei Chen , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.
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公开(公告)号：US11550229B1
公开(公告)日：2023-01-10
申请号：US17351948
申请日：2021-06-18
发明人： Yi-Chen Su , Tzu-Yi Wang , Ta-Cheng Lien
IPC分类号： G03F7/20
摘要： A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle with UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.
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公开(公告)号：US10036951B2
公开(公告)日：2018-07-31
申请号：US14726317
申请日：2015-05-29
发明人： Pei-Cheng Hsu , Chih-Cheng Lin , Hsin-Chang Lee , Ta-Cheng Lien , Anthony Yen
CPC分类号： G03F1/64 , G03F7/70741
摘要： A method for fabricating a pellicle assembly for a lithography process includes fabricating a pellicle frame including a sidewall having a porous material. In some embodiments, the pellicle frame is subjected to an anodization process to form the porous material. The porous material includes a plurality of pore channels extending, in a direction perpendicular to an exterior surface of the sidewall, from the exterior surface to an interior surface of the sidewall. In various embodiments, a pellicle membrane is formed, and the pellicle membrane is attached to the pellicle frame such that the pellicle membrane is suspended by the pellicle frame. Some embodiments disclosed herein further provide a system including a membrane and a pellicle frame that secures the membrane across the pellicle frame. In some examples, a portion of the pellicle frame includes a porous material, where the porous material includes the plurality of pore channels.
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公开(公告)号：US09535317B2
公开(公告)日：2017-01-03
申请号：US14582459
申请日：2014-12-24
发明人： Pei-Cheng Hsu , Chih-Cheng Lin , Ta-Cheng Lien , Wei-Shiuan Chen , Hsin-Chang Lee , Anthony Yen
摘要： A method for forming a lithography mask includes forming a capping layer on a reflective multilayer layer, the capping layer comprising a first material, forming a patterned patterning layer on the capping layer, and introducing a secondary material into the capping layer, the secondary material having an atomic number that is smaller than 15.
摘要翻译： 一种形成光刻掩模的方法包括在反射多层层上形成覆盖层，封盖层包括第一材料，在封盖层上形成图案化图案层，并将次材料引入覆盖层中，第二材料具有 小于15的原子序数。
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公开(公告)号：US20240345472A1
公开(公告)日：2024-10-17
申请号：US18751858
申请日：2024-06-24
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Li-Jui Chen , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G03F1/64 , H01L21/033
CPC分类号： G03F1/64 , H01L21/0337
摘要： A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.
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公开(公告)号：US12085843B2
公开(公告)日：2024-09-10
申请号：US18226151
申请日：2023-07-25
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Tzu Yi Wang
CPC分类号： G03F1/22 , G03F1/80 , H01J37/32009 , H01J2237/334
摘要： In a method of manufacturing a photo mask, an etching mask layer having circuit patterns is formed over a target layer of the photo mask to be etched. The photo mask includes a backside conductive layer. The target layer is etched by plasma etching, while preventing active species of plasma from attacking the backside conductive layer.
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公开(公告)号：US12044960B2
公开(公告)日：2024-07-23
申请号：US18214348
申请日：2023-06-26
发明人： Pei-Cheng Hsu , Ching-Huang Chen , Hung-Yi Tsai , Ming-Wei Chen , Hsin-Chang Lee , Ta-Cheng Lien
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.
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公开(公告)号：US12013630B2
公开(公告)日：2024-06-18
申请号：US17991740
申请日：2022-11-21
发明人： Pei-Cheng Hsu , Ta-Cheng Lien , Hsin-Chang Lee
IPC分类号： G03F1/24
CPC分类号： G03F1/24
摘要： A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.
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公开(公告)号：US20240069431A1
公开(公告)日：2024-02-29
申请号：US18110838
申请日：2023-02-16
IPC分类号： G03F1/32
CPC分类号： G03F1/32
摘要： In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.
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