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公开(公告)号：US20240321640A1
公开(公告)日：2024-09-26
申请号：US18404831
申请日：2024-01-04
发明人： Szu-Hua Chen , Lilin Chang , Yahru Cheng , Wei-Yen Woon , Szuya Liao
IPC分类号： H01L21/822 , H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/775
CPC分类号： H01L21/8221 , H01L21/823807 , H01L21/823857 , H01L27/0922 , H01L29/0673 , H01L29/42392 , H01L29/4908 , H01L29/66439 , H01L29/66545 , H01L29/775
摘要： A stacked channel structure includes a first channel structure having a first gate dielectric thereon, an isolation structure over the first channel structure, and a second channel structure over the isolation structure. The second channel structure has a second gate dielectric thereon. A method may include forming a dummy layer that has a top surface below the second channel structure, selectively depositing a hard mask over the second gate dielectric, selectively removing the dummy layer, and selectively removing the hard mask after the dummy layer. Deposition parameters and a composition of the dummy layer are configured to inhibit deposition of the hard mask on the dummy layer. A first gate electrode and a second gate electrode may be formed over the first gate dielectric and the second gate dielectric, respectively. The hard mask may be selectively removed before or after forming the first gate electrode.
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公开(公告)号：US20230087992A1
公开(公告)日：2023-03-23
申请号：US17695069
申请日：2022-03-15
发明人： Wei-Che Hsieh , Yu-Chung Su , Chia-Ching Chu , Tzu-Yi Wang , Ta-Cheng Lien , Hsin-Chang Lee , Ching-Yu Chang , Yahru Cheng
摘要： Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.
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公开(公告)号：US20240363722A1
公开(公告)日：2024-10-31
申请号：US18769246
申请日：2024-07-10
发明人： Ting-Ting CHEN , Tsai-Jung Ho , Tsung-Han Ko , Tetsuji Ueno , Yahru Cheng , Chen-Han Wang , Keng-Chu Lin , Shuen-Shin Liang , Tsu-Hsiu Perng
CPC分类号： H01L29/4991 , H01L29/0653 , H01L29/6656
摘要： The present disclosure describes a method of forming an intermediate spacer structure between a gate structure and a source/drain (S/D) contact structure and removing a top portion of the intermediate spacer structure to form a recess. The intermediate spacer structure includes a first spacer layer, a second spacer layer, and a sacrificial spacer layer between the first spacer layer and the second spacer layer. The method further includes removing the sacrificial spacer layer to form an air gap between the first spacer layer and the second spacer layer and spinning a dielectric layer on the air gap, the first spacer layer, and the second spacer layer to fill in the recess and seal the air gap. The dielectric layer includes raw materials for a spin-on dielectric material.
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公开(公告)号：US11971657B2
公开(公告)日：2024-04-30
申请号：US17717984
申请日：2022-04-11
发明人： An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang , Yahru Cheng
IPC分类号： G03F7/038 , G03F7/004 , G03F7/32 , H01L21/027 , H01L21/47
CPC分类号： G03F7/0048 , G03F7/038 , G03F7/0382 , G03F7/32 , G03F7/322 , G03F7/325 , H01L21/0273 , H01L21/47
摘要： A photoresist developer includes a solvent having Hansen solubility parameters of 15 pKa>9.5; and a chelate.
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5.发明授权公开(公告)号：US12057315B2
公开(公告)日：2024-08-06
申请号：US18204259
申请日：2023-05-31
发明人： Yi-Chen Kuo , Chih-Cheng Liu , Ming-Hui Weng , Jia-Lin Wei , Yen-Yu Chen , Jr-Hung Li , Yahru Cheng , Chi-Ming Yang , Tze-Liang Lee , Ching-Yu Chang
IPC分类号： H01L21/00 , H01L21/02 , H01L21/027
CPC分类号： H01L21/0275 , H01L21/0228 , H01L21/02362
摘要： A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
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公开(公告)号：US12013641B2
公开(公告)日：2024-06-18
申请号：US17875282
申请日：2022-07-27
发明人： Chih-Tsung Shih , Chen-Ming Wang , Yahru Cheng , Bo-Tsun Liu , Tsung Chuan Lee
CPC分类号： G03F7/11 , G03F7/168 , G03F7/2004 , G03F7/38
摘要： A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.
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