公开(公告)号：US10316411B2

公开(公告)日：2019-06-11

申请号：US14665346

申请日：2015-03-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Wei-Che Hsieh ,  Brian Wang ,  Tze-Liang Lee ,  Yi-Hung Lin ,  Hao-Ming Lien ,  Shiang-Rung Tsai ,  Tai-Chun Huang

IPC分类号： C23C16/455 ,  H01L21/00 ,  C23C16/458 ,  C23C16/54 ,  C23C16/52

摘要： An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

公开(公告)号：US20230087992A1

公开(公告)日：2023-03-23

申请号：US17695069

申请日：2022-03-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Yu-Chung Su ,  Chia-Ching Chu ,  Tzu-Yi Wang ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Ching-Yu Chang ,  Yahru Cheng

IPC分类号： G03F7/039 ,  G03F7/40 ,  G03F7/004 ,  G03F7/32

摘要： Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.

公开(公告)号：US11380776B2

公开(公告)日：2022-07-05

申请号：US17176970

申请日：2021-02-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Chunyao Wang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/08 ,  H01L29/36 ,  H01L29/423 ,  H01L29/417 ,  H01L29/49 ,  H01L21/285 ,  H01L29/45

摘要： Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

公开(公告)号：US20230282731A1

公开(公告)日：2023-09-07

申请号：US18316956

申请日：2023-05-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Chunyao Wang

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L29/6656 ,  H01L29/7851 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/4983 ,  H01L21/28518 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/45

摘要： Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

公开(公告)号：US20190355570A1

公开(公告)日：2019-11-21

申请号：US15983565

申请日：2018-05-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/033 ,  H01L21/308 ,  H01L21/8234

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

公开(公告)号：US20140170319A1

公开(公告)日：2014-06-19

申请号：US13716052

申请日：2012-12-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Brian Wang ,  Tze-Liang Lee ,  Yi-Hung Lin ,  Hao-Ming Lien ,  Shiang-Rung Tsai ,  Tai-Chun Huang

IPC分类号： B05B1/14

CPC分类号： C23C16/45578 ,  C23C16/45504 ,  C23C16/45546 ,  C23C16/4584 ,  C23C16/52 ,  C23C16/54 ,  H01L21/00

摘要： An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

摘要翻译： 提供了分别在一叠晶片上形成薄膜的注射器。 喷射器包括多个孔结构。 每个相邻的两个晶片之间具有晶片间隔，并且每个晶片具有工作表面。 孔结构分别对应于相应的晶片间隔。 工作表面和相应的孔结构之间具有平行的距离。 平行距离大于晶片间距的一半。 还提供了晶片处理装置和分别在晶片叠层上形成薄膜的方法。

公开(公告)号：US11652158B2

公开(公告)日：2023-05-16

申请号：US17855119

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Chunyao Wang

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/49 ,  H01L21/285 ,  H01L29/45

CPC分类号： H01L29/6656 ,  H01L21/28518 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

摘要： Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

公开(公告)号：US20220102527A1

公开(公告)日：2022-03-31

申请号：US17176970

申请日：2021-02-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Che Hsieh ,  Chunyao Wang

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L21/285

摘要： Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes forming a semiconductor element over a substrate, the semiconductor element including a channel region and a source/drain region, forming a dummy gate stack over the channel region of the semiconductor element, depositing a first spacer layer over sidewalls of the dummy gate stack, depositing a second spacer layer over the first spacer layer, wherein the second spacer layer includes at least one silicon sublayer and at least one nitrogen-containing sublayer, after the depositing of the second spacer layer, etching the source/drain region of the semiconductor element to form a source/drain recess, and after the etching, removing the second spacer layer.

公开(公告)号：US10170367B2

公开(公告)日：2019-01-01

申请号：US15725805

申请日：2017-10-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Chao-Cheng Chen ,  Hao-Ming Lien ,  Wei-Che Hsieh ,  Chun-Hung Lee

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/308 ,  H01L29/66 ,  H01L27/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

摘要： In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.

公开(公告)号：US20180151441A1

公开(公告)日：2018-05-31

申请号：US15725805

申请日：2017-10-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu Chao Lin ,  Chao-Cheng Chen ,  Hao-Ming Lien ,  Wei-Che Hsieh ,  Chun-Hung Lee

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L21/308

CPC分类号： H01L21/823431 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

摘要： In an embodiment, a method includes: patterning a plurality of mandrels over a mask layer; forming an etch coating layer on top surfaces of the mask layer and the mandrels; depositing a dielectric layer over the mask layer and the mandrels, a first thickness of the dielectric layer along sidewalls of the mandrels being greater than a second thickness of the dielectric layer along the etch coating layer; removing horizontal portions of the dielectric layer; and patterning the mask layer using remaining vertical portions of the dielectric layer as an etching mask.