A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.