公开(公告)号：US20230124857A1

公开(公告)日：2023-04-20

申请号：US17744624

申请日：2022-05-14

Applicant: SEMES CO., LTD.

Inventor： Yoon Seok CHOI ,  Soon Cheon Cho ,  Sang Jeong Lee ,  Hyun Woo Jo ,  Jong Won Park

IPC: H01J37/32

Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.