PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING THE SAME

    公开(公告)号:US20230124857A1

    公开(公告)日:2023-04-20

    申请号:US17744624

    申请日:2022-05-14

    Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a chamber having a processing space defined therein in which plasma is generated; and a plasma generation unit configured to excite gas in the processing space into a plasma state, wherein the plasma generation unit includes: a first power supply to supply power for generation of the plasma; a coil connected to the first power supply; a first shunt capacitor disposed between and connected to a first node of the coil and a ground; and a second shunt capacitor disposed between and connected to a second node other than the first node of the coil and the ground.

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