A method of forming a light emitting device includes forming a first doped compound semiconductor layer over a substrate, forming an active layer over the first doped compound semiconductor layer, forming a second doped compound semiconductor layer over the active layer, forming a patterned ion implantation mask layer, and implanting ions of at least one electrically inactive dopant species in portions of the active layer that are not masked by the patterned ion implantation mask layer. An electrically inactive insulating region including a semiconductor material and atoms of the at least one electrically inactive dopant species is formed. Unimplanted portions of the active layer constitute active regions of an array of light emitting diodes.