公开(公告)号：US20230223494A1

公开(公告)日：2023-07-13

申请号：US18150976

申请日：2023-01-06

Applicant: NANOSYS, INC.

Inventor： Zhen CHEN ,  Saket CHADDA ,  Shuke YAN

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/06 ,  H01L33/38 ,  H01L25/075

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/62 ,  H01L33/06 ,  H01L33/382 ,  H01L25/0753 ,  H01L2933/0016

Abstract: A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.

公开(公告)号：US20230132423A1

公开(公告)日：2023-05-04

申请号：US18049667

申请日：2022-10-26

Applicant: NANOSYS, INC.

Inventor： Zhen CHEN ,  Saket CHADDA ,  Shuke YAN

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/00 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A method of forming a light emitting device includes forming a first doped compound semiconductor layer over a substrate, forming an active layer over the first doped compound semiconductor layer, forming a second doped compound semiconductor layer over the active layer, forming a patterned ion implantation mask layer, and implanting ions of at least one electrically inactive dopant species in portions of the active layer that are not masked by the patterned ion implantation mask layer. An electrically inactive insulating region including a semiconductor material and atoms of the at least one electrically inactive dopant species is formed. Unimplanted portions of the active layer constitute active regions of an array of light emitting diodes.