公开(公告)号：US20230223494A1

公开(公告)日：2023-07-13

申请号：US18150976

申请日：2023-01-06

Applicant: NANOSYS, INC.

Inventor： Zhen CHEN ,  Saket CHADDA ,  Shuke YAN

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  H01L33/06 ,  H01L33/38 ,  H01L25/075

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/62 ,  H01L33/06 ,  H01L33/382 ,  H01L25/0753 ,  H01L2933/0016

Abstract: A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.

公开(公告)号：US20230155075A1

公开(公告)日：2023-05-18

申请号：US18055572

申请日：2022-11-15

Applicant: NANOSYS, INC.

Inventor： Jason HARTLOVE ,  Saket CHADDA ,  Ernest C. LEE ,  Brian KIM ,  Homer ANTONIADIS ,  Ravisubhash TANGIRALA ,  David OLMEIJER

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/60 ,  H01L33/32

Abstract: A light emitting device includes a first optical cavity bounded by cavity walls, a first light emitting diode located in the first optical cavity and configured to emit blue or ultraviolet radiation first incident photons, a first color conversion material located over the first light emitting diode and configured to absorb the first incident photons emitted by the light emitting diode and to generate first converted photons having a longer peak wavelength than a peak wavelength of the first incident photons, and a first color selector located over the first color conversion material and configured to absorb or reflect the first incident photons and to transmit the first converted photons.

公开(公告)号：US20230132423A1

公开(公告)日：2023-05-04

申请号：US18049667

申请日：2022-10-26

Applicant: NANOSYS, INC.

Inventor： Zhen CHEN ,  Saket CHADDA ,  Shuke YAN

IPC: H01L33/44 ,  H01L27/15 ,  H01L33/00 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A method of forming a light emitting device includes forming a first doped compound semiconductor layer over a substrate, forming an active layer over the first doped compound semiconductor layer, forming a second doped compound semiconductor layer over the active layer, forming a patterned ion implantation mask layer, and implanting ions of at least one electrically inactive dopant species in portions of the active layer that are not masked by the patterned ion implantation mask layer. An electrically inactive insulating region including a semiconductor material and atoms of the at least one electrically inactive dopant species is formed. Unimplanted portions of the active layer constitute active regions of an array of light emitting diodes.

公开(公告)号：US20230113198A1

公开(公告)日：2023-04-13

申请号：US17937878

申请日：2022-10-04

Applicant: NANOSYS, INC.

Inventor： Saket CHADDA

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/30 ,  H01L33/32 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer has a first crystal structure that matches a second crystal structure of the first-conductivity-type compound semiconductor layer and the second-conductivity-type compound semiconductor layer.

公开(公告)号：US20220223769A1

公开(公告)日：2022-07-14

申请号：US17551578

申请日：2021-12-15

Applicant: NANOSYS, INC.

Inventor： Brian KIM ,  Ivan HUANG ,  Saket CHADDA

IPC: H01L33/58 ,  H01L27/15 ,  H01L33/32

Abstract: A light-emitting device includes a backplane, light-emitting diodes (LEDs) located over a front side of the backplane, and microlenses respectively disposed over the LEDs. Each microlens includes a back surface having a first surface area and configured to receive light emitted from a corresponding LED, an opposing front surface having a second surface area and configured to emit the received light, and at least one sidewall extending from the front surface to the back surface. The second surface area is greater than the first surface area.