- 专利标题： SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW
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申请号： US17933861申请日： 2022-09-21
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公开(公告)号： US20240096751A1公开(公告)日： 2024-03-21
- 发明人: Tao Li , Ruilong Xie , Kisik Choi , Brent A. Anderson
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/8234 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L29/775
摘要：
A semiconductor device includes first source/drain (S/D) epitaxy and a second S/D epitaxy and a gate contact. The device also includes a back end of the line (BEOL) layer connected electrically connected to the first S/D epitaxy and the gate contact on a top side of the device and a wafer that carries the BEOL layer and is on the top side of the device. The device also includes a backside trench epitaxy formed through and contacting portions of the second S/D epitaxy and a backside power distribution network electrically coupled to the backside trench epitaxy and disposed on the bottom of the device.
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