- 专利标题： FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING
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申请号： US18521584申请日： 2023-11-28
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公开(公告)号： US20240097033A1公开(公告)日： 2024-03-21
- 发明人: Wei-Jen LAI , Yen-Ming CHEN , Tsung-Lin LEE
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US16414565 2019.05.16
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/28 ; H01L21/762 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/10 ; H01L29/49
摘要：
The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.
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