Invention Publication
- Patent Title: INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME
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Application No.: US18396071Application Date: 2023-12-26
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Publication No.: US20240135131A1Publication Date: 2024-04-25
- Inventor: Eunsang Jang , Junho Kim , Inhyuk Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR 20200077690 2020.06.24 KR 20200108026 2020.08.25
- The original application number of the division: US17232298 2021.04.16
- Main IPC: G06K19/07
- IPC: G06K19/07 ; G06K19/077 ; H02M3/335

Abstract:
An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
Public/Granted literature
- US20240232564A9 INTERNAL VOLTAGE GENERATION CIRCUIT OF SMART CARD AND SMART CARD INCLUDING THE SAME Public/Granted day:2024-07-11
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