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公开(公告)号:US20240232564A9
公开(公告)日:2024-07-11
申请号:US18396071
申请日:2023-12-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunsang Jang , Junho Kim , Inhyuk Kim
IPC: G06K19/07 , G06K19/077 , H02M3/335
CPC classification number: G06K19/0718 , G06K19/0715 , G06K19/0723 , G06K19/077 , H02M3/33507 , H02M3/33584
Abstract: An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
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公开(公告)号:US12040828B2
公开(公告)日:2024-07-16
申请号:US17708408
申请日:2022-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Minchul Kang , Sanghyo Lee , Kyeongdo Kim , Inhyuk Kim
CPC classification number: H04B1/40 , H02J50/80 , H03H7/06 , H03H7/38 , H04B1/1018
Abstract: A communication device is provided. The communication device includes: an antenna; a matching circuit connected with the antenna; a transmitter configured to generate a transmission communication signal and provide the transmission communication signal to the antenna through the matching circuit; a filter connected between the matching circuit and the antenna; and a receiver configured to receive an attenuated signal from the antenna through the filter. The filter is configured to pass frequencies of an antenna signal corresponding to a pass band and attenuate frequencies of the antenna signal corresponding to a stop band, and a center frequency of the transmission communication signal corresponds to the stop band of the filter.
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公开(公告)号:US20240135131A1
公开(公告)日:2024-04-25
申请号:US18396071
申请日:2023-12-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunsang Jang , Junho Kim , Inhyuk Kim
IPC: G06K19/07 , G06K19/077 , H02M3/335
CPC classification number: G06K19/0718 , G06K19/0715 , G06K19/0723 , G06K19/077 , H02M3/33507 , H02M3/33584
Abstract: An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
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公开(公告)号:US11893435B2
公开(公告)日:2024-02-06
申请号:US17232298
申请日:2021-04-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Eunsang Jang , Junho Kim , Inhyuk Kim
IPC: G05B19/00 , G05B23/00 , G06F7/00 , G06F7/04 , G06T1/00 , G06T7/00 , G08B29/00 , G08C19/00 , H04B1/00 , H04B3/00 , H04Q1/00 , H04Q9/00 , G06K19/07 , G06K19/077 , H02M3/335
CPC classification number: G06K19/0718 , G06K19/077 , G06K19/0715 , G06K19/0723 , H02M3/33507 , H02M3/33584
Abstract: An internal voltage generation circuit of a smart card to perform fingerprint authentication and a smart card includes a first contact switch, a second contact switch, a switched capacitor converter and a bidirectional switched capacitor converter. The first contact switch selectively switches a contact voltage to a first node based on a first switching enable signal, in a contact mode. The second contact switch selectively switches the contact voltage to a second node based on a second switching enable signal, in the contact mode. The bidirectional switched capacitor converter steps down a first driving voltage of the first node to provide a second voltage to the second node in the contactless mode and either steps down the first driving voltage or boosts a second driving voltage of the second node based on a level of the contact voltage to provide a boosted voltage to the first node in the contact mode.
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公开(公告)号:US09859237B2
公开(公告)日:2018-01-02
申请号:US14843326
申请日:2015-09-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Heungkyu Kwon , Inhyuk Kim
CPC classification number: H01L24/05 , G06F21/30 , H01L21/561 , H01L21/568 , H01L22/32 , H01L23/3114 , H01L23/3128 , H01L23/3192 , H01L24/03 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/48 , H01L24/85 , H01L25/0657 , H01L2224/0231 , H01L2224/0237 , H01L2224/02375 , H01L2224/02381 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05024 , H01L2224/05548 , H01L2224/06515 , H01L2224/12105 , H01L2224/13024 , H01L2224/131 , H01L2224/16227 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2225/06568 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2924/00 , H01L2924/014
Abstract: A chip includes a core layer, at least one redistribution layer formed on the core layer, and at least one triple pad connected to a pad of the core layer through the at least one redistribution layer or at least one via connected to the at least one redistribution layer. The at least one triple pad includes a bonding pad, a redistribution layer pad connected to the at least one redistribution layer, and a test pad configured to perform a wafer level test. The bonding pad, the redistribution layer pad and the test pad are connected to one another through the at least one redistribution layer, and the test pad is disposed in a core area that overlaps the core layer.
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