Invention Publication
- Patent Title: METHOD OF BREAKING THROUGH ETCH STOP LAYER
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Application No.: US18402563Application Date: 2024-01-02
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Publication No.: US20240136183A1Publication Date: 2024-04-25
- Inventor: Yu-Shih Wang , Hong-Jie Yang , Chia-Ying Lee , Po-Nan Yeh , U-Ting Chiu , Chun-Neng Lin , Ming-Hsi Yeh , Kuo-Bin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/308 ; H01L21/8234 ; H01L29/66 ; H01L29/78

Abstract:
A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.
Information query
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