Invention Publication
- Patent Title: METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A DOPANT
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Application No.: US18402173Application Date: 2024-01-02
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Publication No.: US20240145596A1Publication Date: 2024-05-02
- Inventor: Su-Hao Liu , Kuo-Ju Chen , Kai-Hsuan Lee , I-Hsieh Wong , Cheng-Yu Yang , Liang-Yin Chen , Huicheng Chang , Yee-Chia Yeo , Syun-Ming Jang , Meng-Han Chou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US16879894 2020.05.21
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/266 ; H01L21/3115 ; H01L21/764 ; H01L21/768 ; H01L21/8238 ; H01L29/08 ; H01L29/417 ; H01L29/49 ; H01L29/66
Abstract:
A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.
Information query
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