- 专利标题: ELECTROPLATING APPARATUS AND ELECTROPLATING METHOD
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申请号: US18436968申请日: 2024-02-08
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公开(公告)号: US20240183051A1公开(公告)日: 2024-06-06
- 发明人: Zhaowei Jia , Jian Wang , Hui Wang , Hongchao Yang
- 申请人: ACM RESEARCH (SHANGHAI) INC.
- 申请人地址: CN Shanghai
- 专利权人: ACM RESEARCH (SHANGHAI) INC.
- 当前专利权人: ACM RESEARCH (SHANGHAI) INC.
- 当前专利权人地址: CN Shanghai
- 优先权: CN 1810487847.5 2018.05.21
- 分案原申请号: US17057981 2020.11.23
- 主分类号: C25D5/18
- IPC分类号: C25D5/18 ; C25D7/12 ; C25D17/00 ; C25D17/06 ; C25D17/12 ; C25D21/12 ; H01L21/288 ; H01L21/687 ; H01L23/544
摘要:
An electroplating apparatus for electroplating on a front surface of a wafer, the electroplating apparatus includes a plurality of anodes, the plurality of anodes forming electric fields on the front surface of the wafer. An independent electric field is formed in a designated area. The intensity of the independent electric field is independently controlled. A total amount of power received within the designated area is adjusted so as to control a plating thickness at a specified location on the front surface of the wafer.
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