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公开(公告)号：US20240183051A1
公开(公告)日：2024-06-06
申请号：US18436968
申请日：2024-02-08
发明人： Zhaowei Jia , Jian Wang , Hui Wang , Hongchao Yang
IPC分类号： C25D5/18 , C25D7/12 , C25D17/00 , C25D17/06 , C25D17/12 , C25D21/12 , H01L21/288 , H01L21/687 , H01L23/544
CPC分类号： C25D5/18 , C25D7/12 , C25D17/001 , C25D17/06 , C25D17/12 , C25D21/12 , H01L21/2885 , H01L21/68764 , H01L23/544 , H01L2223/54493
摘要： An electroplating apparatus for electroplating on a front surface of a wafer, the electroplating apparatus includes a plurality of anodes, the plurality of anodes forming electric fields on the front surface of the wafer. An independent electric field is formed in a designated area. The intensity of the independent electric field is independently controlled. A total amount of power received within the designated area is adjusted so as to control a plating thickness at a specified location on the front surface of the wafer.
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公开(公告)号：US20200294825A1
公开(公告)日：2020-09-17
申请号：US16086227
申请日：2016-03-18
发明人： Hui Wang , Hongchao Yang , Jun Wu , Wenjun Wang , Fuping Chen , Zhiyou Fang
IPC分类号： H01L21/67 , H01L21/687 , F27B17/00 , F27D5/00
摘要： A substrate heat treatment apparatus for heat treating a substrate, comprising a bake plate, a plurality of support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The plurality of support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap formed between the inner circumferential wall of the baffle plate and the substrate.
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公开(公告)号：US11781235B2
公开(公告)日：2023-10-10
申请号：US17419036
申请日：2018-12-28
发明人： Yinuo Jin , Hongchao Yang , Jian Wang , Hui Wang
CPC分类号： C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/12
摘要： A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P11 and continue with a period T11 (3002); step 3: when the period T11 ends, adjusting the first plating power supply applied on the first anode to output a power value P12 and continue with a period T12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P21 and continue with a period T21 (3003); and step 4: when the period T21 ends, adjusting the second plating power supply applied on the second anode to output a power value P22 and continue with a period T22; wherein step 2 to step 4 are performed periodically.
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公开(公告)号：US10227705B2
公开(公告)日：2019-03-12
申请号：US14889922
申请日：2013-05-09
发明人： Jian Wang , Yinuo Jin , Hongchao Yang , Hui Wang
摘要： An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.
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公开(公告)号：US20240279838A1
公开(公告)日：2024-08-22
申请号：US18568717
申请日：2022-04-28
发明人： Hui Wang , Hongchao Yang , Jian Wang , Yinuo Jin , Yi Shi , Zheng Zhang
CPC分类号： C25D17/007 , C25D17/06 , C25D21/12
摘要： Disclosed in an embodiment of the present invention is an electroplating device, comprising an electroplating tank, a clamp, a positioning cylinder and an anode, wherein the positioning cylinder is located in the electroplating tank; the positioning cylinder is open at one end; the anode is located inside the positioning cylinder, and the positioning cylinder comes in contact with the anode in a sealing manner; and in the entire surface region of the anode, only a first surface comes in contact with an electroplating solution, and the first surface is parallel and opposite to a substrate, with the center of the first surface being aligned with the center of the substrate, and the size of the first surface being similar to that of an effective electroplating region of the substrate. By means of the electroplating device, an electric field generated by the anode is uniformly distributed on the surface of the substrate, thereby improving the uniformity of the electroplating height on the surface of the substrate. Further disclosed in an embodiment of the present invention is an electroplating method using the electroplating device.
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公开(公告)号：US20240044038A1
公开(公告)日：2024-02-08
申请号：US18264378
申请日：2021-12-13
发明人： Hui Wang , Jian Wang , Zhaowei Jia , Hongchao Yang , Jun Cai , Chenhua Lu , Jiaqi Li , Meng Wu
CPC分类号： C25D21/10 , C25D17/001 , C25D7/12
摘要： Disclosed in one embodiment of the present invention is an electroplating apparatus and an electroplating method. The electroplating apparatus comprises a plurality of paddles arranged in parallel. The paddles move in a direction parallel to a substrate, and are used to stir electroplating solution. Within one cycle, the paddles perform reciprocating motion at a set stroke, and the turning points of the reciprocating motion are related to the width of the paddles and the narrowest width of a gap between adjacent paddles. According to the present invention, by designing the size and movement mode of the paddles, the accumulated time in which each corresponding point on the substrate is blocked by the paddles is equal, so that the received quantity of electricity is equal, and thus the consistency of an electroplating height is further improved.
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公开(公告)号：US20240026561A1
公开(公告)日：2024-01-25
申请号：US18254783
申请日：2021-10-29
发明人： Zhaowei Jia , Jian Wang , Hui Wang , Hongchao Yang
IPC分类号： C25D21/12 , C25D17/10 , C25D17/00 , C25D7/12 , H01L21/288
CPC分类号： C25D21/12 , C25D17/10 , C25D17/001 , C25D17/002 , C25D7/12 , H01L21/2885
摘要： The present invention discloses a plating apparatus. The plating apparatus comprises a multiple electrodes. The multiple electrodes include a main electrode and at least two second electrodes. The main electrode and the at least two second electrodes respectively generate an electric field in a corresponding area on the surface of a wafer. The main electrode and the at least two second electrodes respectively have a control interface. By selecting the combination of the control relationship between each second electrode and the main electrode, the wafers with different sizes or different notch shapes are plated, and the control relationship is independent control or joint control. The plating apparatus of the present invention can plate wafers with different sizes or different notch shapes without replacing the whole plating chamber.
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公开(公告)号：US11859303B2
公开(公告)日：2024-01-02
申请号：US16643349
申请日：2017-08-30
发明人： Zhaowei Jia , Hongchao Yang , Chenhua Lu , Jian Wang , Hui Wang
CPC分类号： C25D5/08 , C25D13/22 , C25D17/002 , C25D17/06 , C25D21/12
摘要： A plating apparatus for depositing metal on a substrate, comprising a membrane frame (14), a catholyte inlet pipe (30) and a center cap (40). The membrane frame (14) has a center passage (144) which passes through the center of the membrane frame (14). The catholyte inlet pipe (30) is connected to the center passage (144) of the membrane frame (14). The center cap (40) is fixed at the center of the membrane frame (14) and covers over the center passage (144) of the membrane frame (14). The top of the center cap (40) has a plurality of first holes (42). The catholyte inlet pipe (30) supplies catholyte to the center cap (40) through the center passage (144) of the membrane frame (14), and the catholyte is supplied to a center area of the substrate through the first holes (42) of the center cap (40).
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公开(公告)号：US20230374691A1
公开(公告)日：2023-11-23
申请号：US17907053
申请日：2020-03-23
发明人： Hui Wang , Jian Wang , Hongchao Yang , Zhaowei Jia
摘要： The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.
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公开(公告)号：US20220081796A1
公开(公告)日：2022-03-17
申请号：US17419036
申请日：2018-12-28
发明人： Yinuo Jin , Hongchao Yang , Jian Wang , Hui Wang
摘要： A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (3001); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value P11 and continue with a period T11 (3002); step 3: when the period T11 ends, adjusting the first plating power supply applied on the first anode to output a power value P12 and continue with a period T12, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value P21 and continue with a period T21 (3003); and step 4: when the period T21 ends, adjusting the second plating power supply applied on the second anode to output a power value P22 and continue with a period T22; wherein step 2 to step 4 are performed periodically.
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