Invention Publication
- Patent Title: LATERAL PHOTOTRANSISTOR
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Application No.: US18075908Application Date: 2022-12-06
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Publication No.: US20240186441A1Publication Date: 2024-06-06
- Inventor: Alexander M. DERRICKSON , Uppili S. RAGHUNATHAN , Vibhor JAIN , Yusheng BIAN , Judson R. HOLT
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Main IPC: H01L31/11
- IPC: H01L31/11 ; H01L31/0232 ; H01L31/028 ; H01L31/18
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.
Information query
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