公开(公告)号：US20220293811A1

公开(公告)日：2022-09-15

申请号：US17196756

申请日：2021-03-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. ADUSUMILLI ,  Mark D. LEVY ,  Yusheng BIAN

IPC: H01L31/105 ,  H01L31/0352 ,  H01L31/18

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors used with a broadband signal and methods of manufacture. The structure includes: a first photodetector; a second photodetector adjacent to the first photodetector; a first airgap of a first size under the first photodetector structured to detect a first wavelength of light; and a second airgap of a second size under the second photodetector structured to detect a second wavelength of light.

公开(公告)号：US20220137292A1

公开(公告)日：2022-05-05

申请号：US17084186

申请日：2020-10-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng BIAN ,  Siva P. ADUSUMILLI ,  Bo PENG ,  Kenneth J. GIEWONT

IPC: G02B6/124 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers integrated with one or more airgap and methods of manufacture. The structure includes: a substrate material comprising one or more airgaps; and a grating coupler disposed over the substrate material and the one or more airgaps.

公开(公告)号：US20240111096A1

公开(公告)日：2024-04-04

申请号：US17958777

申请日：2022-10-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng BIAN ,  Sunoo KIM ,  Edward W. KIEWRA

IPC: G02B6/122 ,  G02B6/13 ,  G03F7/00

CPC classification number: G02B6/1228 ,  G02B6/13 ,  G03F7/0005

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to hybrid edge couplers with voids and methods of manufacture. The structure includes: a dielectric material; at least one waveguide structure embedded within the dielectric material; and at least one airgap within the dielectric material and extending along a length of the at least one waveguide structure.

公开(公告)号：US20220003931A1

公开(公告)日：2022-01-06

申请号：US16919867

申请日：2020-07-02

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Won Suk LEE ,  Abdelsalam A. ABOKETAF

IPC: G02B6/26

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.

公开(公告)号：US20210396929A1

公开(公告)日：2021-12-23

申请号：US17462491

申请日：2021-08-31

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/122 ,  G02B6/125 ,  G02B1/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20240045140A1

公开(公告)日：2024-02-08

申请号：US18378788

申请日：2023-10-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yusheng BIAN ,  Ajey Poovannummoottil JACOB ,  Steven M. SHANK

IPC: G02B6/122 ,  G02B6/125 ,  G02B1/00

CPC classification number: G02B6/1225 ,  G02B6/125 ,  G02B1/002 ,  G02B1/005 ,  G02B2006/12061

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

公开(公告)号：US20220137290A1

公开(公告)日：2022-05-05

申请号：US17087182

申请日：2020-11-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Abdelsalam A. ABOKETAF ,  Won Suk LEE ,  Yusheng BIAN

IPC: G02B6/028 ,  G02B6/122

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to multi-mode optical waveguide structures with isolated absorbers and methods of manufacture. The structure includes: a waveguide structure including tapered segments; and at least one isolated waveguide absorber adjacent to the waveguide structure along its length.

公开(公告)号：US20240186441A1

公开(公告)日：2024-06-06

申请号：US18075908

申请日：2022-12-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Uppili S. RAGHUNATHAN ,  Vibhor JAIN ,  Yusheng BIAN ,  Judson R. HOLT

IPC: H01L31/11 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/1105 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1808

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral phototransistors and methods of manufacture. The structure includes a lateral bipolar transistor; and a T-shaped photosensitive structure vertically above an intrinsic base of the lateral bipolar transistor.

公开(公告)号：US20220320015A1

公开(公告)日：2022-10-06

申请号：US17223596

申请日：2021-04-06

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor JAIN ,  Yusheng BIAN ,  Yves T. NGU ,  Sunil K. SINGH ,  Sebastian T. VENTRONE ,  Johnatan A. KANTAROVSKY

IPC: H01L23/00

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a backside structure for optical attack mitigation and methods of manufacture. The structure includes: at least one device on a front side of a semiconductor substrate; and a plurality of grating layers under the at least one device. The plurality of grating layers includes at least a first material having a first refractive index alternating with a second material having a second refractive index.

公开(公告)号：US20220171123A1

公开(公告)日：2022-06-02

申请号：US17108732

申请日：2020-12-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark D. LEVY ,  Siva P. ADUSUMILLI ,  Yusheng BIAN

IPC: G02B6/122 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a waveguide structure with attenuator and methods of manufacture. The structure includes: a waveguide structure including semiconductor material; an attenuator underneath the waveguide structure; an airgap structure vertically aligned with and underneath the waveguide structure and the attenuator; and shallow trench isolation structures on sides of the waveguide structure and merging with the airgap structure.