- 专利标题： GRAPHENE-CAPPED COPPER IN DUAL DAMASCENE INTERCONNECT
-
申请号： US18291200申请日： 2022-07-19
-
公开(公告)号： US20240213159A1公开(公告)日： 2024-06-27
- 发明人: Asish Parbatani , Bart J. van Schravendijk , Bhadri N. Varadarajan , Ieva Narkeviciute , Easwar Srinivasan , Kashish Sharma , Randolph Knarr , Stefan Schmitz , Vinayak Ramanan
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 国际申请： PCT/US2022/073906 2022.07.19
- 进入国家日期： 2024-01-22
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; C23C16/04 ; C23C16/26 ; C23C16/455 ; C23C16/56 ; H01L21/768
摘要：
A method for selectively depositing graphene on a metal surface in a back-end-of-line substrate is provided. The method comprises providing the substrate comprising a first dielectric layer and a copper interconnect in the first dielectric layer, the copper interconnect having an exposed metal surface, wherein the exposed metal surface comprises copper, and selectively deposing a carbon layer on the exposed metal surface.
信息查询
IPC分类:
