公开(公告)号：US20240213159A1

公开(公告)日：2024-06-27

申请号：US18291200

申请日：2022-07-19

申请人： Lam Research Corporation

发明人： Asish Parbatani ,  Bart J. van Schravendijk ,  Bhadri N. Varadarajan ,  Ieva Narkeviciute ,  Easwar Srinivasan ,  Kashish Sharma ,  Randolph Knarr ,  Stefan Schmitz ,  Vinayak Ramanan

IPC分类号： H01L23/532 ,  C23C16/04 ,  C23C16/26 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC分类号： H01L23/53276 ,  C23C16/04 ,  C23C16/26 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/7685 ,  H01L23/53238

摘要： A method for selectively depositing graphene on a metal surface in a back-end-of-line substrate is provided. The method comprises providing the substrate comprising a first dielectric layer and a copper interconnect in the first dielectric layer, the copper interconnect having an exposed metal surface, wherein the exposed metal surface comprises copper, and selectively deposing a carbon layer on the exposed metal surface.