This disclosure describes designs and methods for via cleaning, peeling protective film, and providing mild surface roughening and cleaning of a computer chip. A system may include a first electrode configured to generate plasma associated with cleaning vias by etching a residual material associated with smearing; an electrostatic stage configured to generate an electrostatic force associated with peeling the dielectric protective film from the semiconductor; and a stage on which the semiconductor is positioned while the electrostatic stage peels the dielectric protective film from the semiconductor, wherein the plasma is further associated with roughening a surface of the semiconductor after peeling the dielectric protective film from the semiconductor.