The method including forming a first photoresist (PR) pattern by exposing first field areas of a first PR layer, forming a second PR pattern by exposing first top field areas and first bottom field areas of a second PR layer, measuring a first top intra-field overlay for the first top field areas and a first bottom intra-field overlay for the first bottom field areas, and determining a top intra-field correction parameter and a bottom intra-field correction parameter based on the first top intra-field overlay and the first bottom intra-field overlay, respectively, may be provided.