公开(公告)号：US20240222201A1

公开(公告)日：2024-07-04

申请号：US18454219

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inbeom YIM ,  Jeongjin LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: H01L21/66 ,  G03F1/70 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L22/20 ,  G03F1/70 ,  H01L21/0274 ,  H01L21/32139

Abstract: The method including forming a first photoresist (PR) pattern by exposing first field areas of a first PR layer, forming a second PR pattern by exposing first top field areas and first bottom field areas of a second PR layer, measuring a first top intra-field overlay for the first top field areas and a first bottom intra-field overlay for the first bottom field areas, and determining a top intra-field correction parameter and a bottom intra-field correction parameter based on the first top intra-field overlay and the first bottom intra-field overlay, respectively, may be provided.

公开(公告)号：US20220128911A1

公开(公告)日：2022-04-28

申请号：US17340267

申请日：2021-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun PARK ,  Youngmin SEO ,  Inbeom YIM

IPC: G03F7/20 ,  H01L21/66

Abstract: A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.