Invention Publication
- Patent Title: PLASMA CHEMICAL VAPOR DEPOSITION (CVD) APPARATUS AND FILM FORMING METHOD
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Application No.: US18401848Application Date: 2024-01-02
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Publication No.: US20240242940A1Publication Date: 2024-07-18
- Inventor: Takuya HIROHASHI
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP 23004201 2023.01.16
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; C23C16/458 ; C23C16/509 ; H01L21/02

Abstract:
An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.
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