公开(公告)号：US20240242940A1

公开(公告)日：2024-07-18

申请号：US18401848

申请日：2024-01-02

Applicant: Kioxia Corporation

Inventor： Takuya HIROHASHI

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01L21/02

CPC classification number: H01J37/32458 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  H01J37/3244 ,  H01L21/02274 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0217

Abstract: An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.

公开(公告)号：US20230309301A1

公开(公告)日：2023-09-28

申请号：US17844585

申请日：2022-06-20

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kenichiro TORATANI ,  Kazuhiro MATSUO ,  Shoji HONDA ,  Takuya HIROHASHI ,  Borong CHEN ,  Kota TAKAHASHI

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

公开(公告)号：US20220085053A1

公开(公告)日：2022-03-17

申请号：US17466200

申请日：2021-09-03

Applicant: Kioxia Corporation

Inventor： Masayuki KITAMURA ,  Takuya HIROHASHI ,  Shigeru KINOSHITA ,  Hiroshi TOYOTA

IPC: H01L27/11578 ,  H01L27/11565 ,  G11C16/14

Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.