- 专利标题: SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
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申请号: US18165958申请日: 2023-02-08
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公开(公告)号: US20240268120A1公开(公告)日: 2024-08-08
- 发明人: Yung-Hsiang CHEN , Tao-Cheng LU , Yao-Wen CHANG
- 申请人: MACRONIX INTERNATIONAL CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H10B43/35
- IPC分类号: H10B43/35 ; H01L23/528 ; H10B41/20 ; H10B41/35 ; H10B41/40 ; H10B43/20 ; H10B43/40
摘要:
A semiconductor structure is provided. The semiconductor structure includes a first substrate, a first circuit layer, a memory array structure, a bonding layer, a second circuit layer, and a second substrate. The first circuit layer is disposed on the first substrate. The memory array structure is disposed on the first circuit layer. The bonding layer is disposed on the memory array structure. The second circuit layer is disposed on the bonding layer. The second substrate is disposed on the second circuit layer.
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