公开(公告)号：US20240268120A1

公开(公告)日：2024-08-08

申请号：US18165958

申请日：2023-02-08

申请人： MACRONIX INTERNATIONAL CO., LTD.

发明人： Yung-Hsiang CHEN ,  Tao-Cheng LU ,  Yao-Wen CHANG

IPC分类号： H10B43/35 ,  H01L23/528 ,  H10B41/20 ,  H10B41/35 ,  H10B41/40 ,  H10B43/20 ,  H10B43/40

CPC分类号： H10B43/35 ,  H01L23/5283 ,  H10B41/20 ,  H10B41/35 ,  H10B41/40 ,  H10B43/20 ,  H10B43/40

摘要： A semiconductor structure is provided. The semiconductor structure includes a first substrate, a first circuit layer, a memory array structure, a bonding layer, a second circuit layer, and a second substrate. The first circuit layer is disposed on the first substrate. The memory array structure is disposed on the first circuit layer. The bonding layer is disposed on the memory array structure. The second circuit layer is disposed on the bonding layer. The second substrate is disposed on the second circuit layer.