A semiconductor structure is provided that includes a plurality of backside power islands, rather than backside power rails. The backside power islands are present in a first device track and a second device track. Each backside power island located in the first device track and the second device track are isolated by a first cut region, and the backside power islands that are located in the first device track are separated from the backside power islands located in the second device track by a second cut region. The second cut region is oriented perpendicular to the first cut region.