发明公开
- 专利标题： SEMICONDUCTOR DEVICE WITH FUNNEL SHAPE SPACER AND METHODS OF FORMING THE SAME
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申请号： US18770349申请日： 2024-07-11
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公开(公告)号： US20240363426A1公开(公告)日： 2024-10-31
- 发明人: Cheng-Yu Yang , Yen-Ting Chen , Wei-Yang Lee , Fu-Kai Yang , Yen-Ming Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/033 ; H01L21/8238 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L29/78
摘要：
Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.
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