Invention Application
- Patent Title: SYNTHETIC ANTIFERROMAGNET, MAGNETIC TUNNELING JUNCTION DEVICE INCLUDING THE SYNTHETIC ANTIFERROMAGNET, AND MEMORY DEVICE INCLUDING THE MAGNETIC TUNNELING JUNCTION DEVICE
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Application No.: US18785018Application Date: 2024-07-26
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Publication No.: US20240387089A1Publication Date: 2024-11-21
- Inventor: Jeongchun RYU , Seungjae LEE , Naoki HASE , Kwangseok KIM
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0190394 20211228,KR10-2022-0073057 20220615
- Main IPC: H01F10/32
- IPC: H01F10/32 ; G11C11/16 ; H10B61/00 ; H10N50/10 ; H10N50/85
Abstract:
A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.
Information query
