公开(公告)号：US20230225219A1

公开(公告)日：2023-07-13

申请号：US17847103

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Kiwoong KIM ,  Jeongchun RYU ,  Seonggeon PARK

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32 ,  H01L43/12 ,  G01R33/09 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01F10/3272 ,  H01L43/12 ,  G01R33/098 ,  H01L43/02

Abstract: Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a first surface and a second surface opposite the first surface; a seed layer disposed in contact with the first surface of the pinned layer; a free layer disposed to face the second surface of the pinned layer; and a tunnel barrier layer disposed between the pinned layer and the free layer, wherein the seed layer includes at least one amorphous material selected from CoFeX and CoFeXTa, and the X includes at least one element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), zirconium (Zr), and hafnium (Hf). The seed layer may not include boron.

公开(公告)号：US20230019156A1

公开(公告)日：2023-01-19

申请号：US17735599

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Kiwoong KIM ,  Naoki HASE

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

公开(公告)号：US20230352072A1

公开(公告)日：2023-11-02

申请号：US17964373

申请日：2022-10-12

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kwangseok KIM ,  Je-Geun PARK ,  Kaixuan ZHANG ,  Jingyuan CUI

IPC: G11C11/18 ,  H01L43/06 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/04 ,  H01L43/10

CPC classification number: G11C11/18 ,  H01L43/065 ,  G11C11/161 ,  H01L27/222 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/04 ,  H01L43/10

Abstract: Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

公开(公告)号：US20230207177A1

公开(公告)日：2023-06-29

申请号：US17847099

申请日：2022-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

CPC classification number: H01F10/3272 ,  H01L43/08 ,  H01L43/10 ,  H01F10/3286 ,  G11C11/161 ,  H01L27/222

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20230059590A1

公开(公告)日：2023-02-23

申请号：US17982955

申请日：2022-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US20240321333A1

公开(公告)日：2024-09-26

申请号：US18459823

申请日：2023-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Kwangseok KIM

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic tunneling junction device includes a synthetic antiferromagnet, a separation metal layer disposed on the synthetic antiferromagnet, a free layer disposed on the separation metal layer and having a variable magnetization direction, an oxide layer disposed on the free layer, and a pinned layer disposed on the oxide layer and having a pinned magnetization direction. The synthetic antiferromagnet may include a first ferromagnetic layer, a non-magnetic metal layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the non-magnetic metal layer. Magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer may be opposite to each other in an in-plane direction and aligned to be inclined with respect to a direction of a current applied to the synthetic antiferromagnet.

公开(公告)号：US20240251685A1

公开(公告)日：2024-07-25

申请号：US18492181

申请日：2023-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Naoki HASE ,  Jeongchun RYU ,  Jungsik PARK

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic memory device may include a spin current channel layer, a wiring crossing the spin current channel layer, and an MTJ layer at an intersection of the spin current channel layer and the wiring. The spin current channel layer may include an MgO-based layer and a beta (β)-phase tungsten (W) layer on the MgO-based layer. The beta (β)-phase tungsten (W) layer may be in contact with the MTJ layer.

公开(公告)号：US20230225220A1

公开(公告)日：2023-07-13

申请号：US17983796

申请日：2022-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Kiwoong KIM ,  Jeongchun RYU ,  Seonggeon PARK

IPC: H01L43/08 ,  H01L43/10 ,  G01R33/09 ,  H01L27/22 ,  H01L43/12 ,  H01F10/32 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  H01L43/10 ,  G01R33/098 ,  H01L27/222 ,  H01L43/12 ,  H01F10/3272 ,  H01L43/02 ,  G11C11/161

Abstract: Provided are a magnetic tunneling junction device having a relatively high tunneling magnetoresistance (TMR) ratio; and a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes: a pinned layer having a first surface and a second surface opposite the first surface; a seed layer disposed in contact with the first surface of the pinned layer; a free layer disposed to face the second surface of the pinned layer; and a tunnel barrier layer disposed between the pinned layer and the free layer, wherein the seed layer includes at least one amorphous material selected from CoFeX and CoFeXTa, and the X includes at least one element selected from niobium (Nb), molybdenum (Mo), tungsten (W), chromium (Cr), zirconium (Zr), and hafnium (Hf). The seed layer may not include boron.

公开(公告)号：US20230020056A1

公开(公告)日：2023-01-19

申请号：US17701056

申请日：2022-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US20220285607A1

公开(公告)日：2022-09-08

申请号：US17584916

申请日：2022-01-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Naoki HASE ,  Seungjae LEE

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: Provided are magnetic tunneling junction devices, memory devices including the magnetic tunneling junction devices, and methods of manufacturing the magnetic tunneling junction devices. The magnetic tunneling junction device includes a first magnetic layer; a second magnetic layer disposed to face the first magnetic layer; and a first oxide layer disposed between the first magnetic layer and the second magnetic layer and including a metal oxide, wherein the metal oxide of the first oxide layer has a stoichiometrically oxygen-deficient composition, and wherein the second magnetic layer includes a magnetic material doped with a metal element.